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| FDD4141 P-Channel PowerTrench(R) MOSFET July 2007 FDD4141 P-Channel PowerTrench(R) MOSFET -40V, -50A, 12.3m Features Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications Inverter Power Supplies S D G S G D -PA52 TO -2 K (TO -252) D MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings -40 20 -50 -58 -10.8 -100 337 69 2.4 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 52 C/W Package Marking and Ordering Information Device Marking FDD4141 (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C Device FDD4141 Package D-PAK (TO-252) 1 Reel Size 13'' Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD4141 P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V -40 -29 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -12.7A rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -10.4A VGS = -10V, ID = -12.7A, TJ = 125C VDS = -5V, ID = -12.7A -1 -1.8 5.8 10.1 14.5 15.3 38 12.3 18.0 18.7 S m -3 V mV/C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 2085 360 210 4.6 2775 480 310 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -20V, ID = -12.7A VDD = -20V, ID = -12.7A, VGS = -10V, RGEN = 6 10 7 38 15 36 19 7 8 19 13 60 27 50 27 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -12.7A (Note 2) -0.8 29 26 -1.2 44 40 V ns nC IF = -12.7A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 52C/W when mounted on a 1 in2 pad of 2 oz copper b) 100C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C 2 www.fairchildsemi.com FDD4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 3.5 3.0 VGS = -3.5V VGS = -3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 VGS = -4.5V 60 VGS = -10V VGS = -4V 2.5 2.0 1.5 1.0 VGS = -10V VGS = -4V VGS = -4.5V 40 VGS = -3.5V 20 VGS = -3V 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 20 40 60 -ID, DRAIN CURRENT(A) 80 100 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 55 SOURCE ON-RESISTANCE (m) ID = -12.7A VGS = -10V 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = -12.7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 45 35 25 TJ = 125oC rDS(on), DRAIN TO 15 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 80 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC 60 40 TJ = 150oC TJ = 25oC 20 TJ = 25oC TJ = -55oC TJ = -55oC 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C 3 www.fairchildsemi.com FDD4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -12.7A 10000 8 VDD = -15V 6 VDD = -10V VDD = -20V CAPACITANCE (pF) Ciss 1000 Coss 4 2 0 0 8 16 24 32 40 Qg, GATE CHARGE(nC) f = 1MHz VGS = 0V Crss 100 0.1 1 10 40 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) 30 -IAS, AVALANCHE CURRENT(A) 50 40 VGS = -4.5V VGS = -10V 10 30 20 10 TJ = 125oC TJ = 25oC Limited by Package RJC = 1.8 C/W o 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 -ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK SINGLE PULSE CURRENTR FOLLOWS: AS = 1.8oC/W JC 150 - T C -----------------------I = I25 125 100us 10 THIS AREA IS LIMITED BY rDS(on) 1000 1ms 10ms DC TC = 25oC 1 SINGLE PULSE TJ = MAX RATED RJC = 1.8oC/W TC = 25oC 100 50 -5 10 0.1 0.1 1 10 100 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C 4 www.fairchildsemi.com FDD4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC -3 -2 -1 0 1 0.01 0.005 -5 10 SINGLE PULSE RJC = 1.8 C/W o 10 -4 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C 5 www.fairchildsemi.com FDD4141 P-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourseSM Green FPSTM Green FPSTM e-SeriesTM GOTTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFEETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I29 (c)2007 Fairchild Semiconductor Corporation FDD4141 Rev.C 6 www.fairchildsemi.com |
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